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New Product Lineup for Body
Automotive Power Devices Combining Energy Efficiency and Compactness
Four Technologies That Contribute to “Green Cars”
- Ultralow on-resistance technology for highly efficient low-voltage power MOSFETs
- Top-level low Vce(sat) and high-speed switching technology for IGBTs with low loss, high voltage tolerance, and large current capacity
- Intelligent thermal FETs and IPDs with on-chip protection functions
- Package technology enabling composite multi-chip products, low resistance, excellent heat dispersion, and improved performance
Renesas contributes to the realization of environmentally friendly “green cars” by supplying compact and lightweight power devices that employ these four technologies to deliver high efficiency and low loss for better fuel efficiency.
High-Performance, High-Quality Solutions
Low-Voltage Power MOSFETs with Ultralow On-Resistance
Renesas is the world’s No. 1 supplier of low-voltage MOSFETs, offering a broad lineup of attractive products. Through the use of a fabrication process employing an all-new optimized trench configuration, we are developing low-on-resistance products capable of large-current drive under the high-temperature conditions of automotive applications.
Products employing the new ANL2 process achieve power consumption approximately 25% less than products based on the UMOS4 process.
Large-Current IGBTs Employing Process Optimization for Low Loss and High Voltage Tolerance
Insulated-gate bipolar transistors (IGBTs) are used in applications such as motor drive in hybrid and electric vehicles. These devices employ an optimized high-performance process to deliver low Vce(sat) and high-speed switching characteristics among the best in the industry, for more comfortable drive and longer effective running distance. Renesas IGBTs can be used with high-quality bare-die devices, high-performance FWDs* used for regeneration , and isolating photocouplers.
* FWD: Free Wheeling Diode
Intelligent Thermal FETs and IPDs
The Renesas lineup of thermal FETs, which have on-chip overheating protection functionality and can easily substitute for power MOSFETs, and IPDs for body applications, which combine high tolerance, high reliability, and proven load short reliability, will continue to be extended moving forward in response to demand for improved system reliability. In future we will offer an even broader range of solutions, and products are currently under development for applications such as LED headlight controllers, lithium-ion battery monitors, and three-phase motor pre-drivers.
Package Technology Enabling Composite Products, Lower On-Resistance, and Better Heat Dispersion
Renesas is developing package technology employing thicker aluminum wiring and higher line counts to help reduce on-resistance, alongside efforts to reduce the on-resistance of power MOS chips. We are also developing and implementing multi-chip package technology for use with products such as IPDs for large-current applications and motor drive ICs. High-pin-count power packages providing excellent heat dispersion and support for multi-functionality are under development as well.