38D2

Key Features:

• Basic machine-language instructions: 71
• The minimum instruction execution time: 0.32 μs(at 12.5 MHz oscillation frequency)
• Memory size (QzROM version)
  • ROM: 16 K to 60 K bytes
  • RAM: 640 to 2048 bytes
• Memory size (Flash memory version)
  • ROM: 60 K bytes
  • RAM: 2048 bytes
• Programmable input/output ports: 51 (common to SEG: 24)
• Interrupts: 18 sources, 16 vectors
• Timers: 8-bit × 4, 16-bit × 2
• Serial Interface : 8-bit × 2 (UART or Clock-synchronized)
• PWM: 10-bit × 2, 16-bit × 1 (common to IGBT output)
• A/D converter: 10-bit × 8 channels (A/D converter can be operated in low-speed mode.)
• Watchdog timer: 8-bit × 1
• ROM correction function : 32 bytes × 2 vectors
• LED direct drive port: 8 (average current: 15 mA, peak current: 30 mA, total current: 90 mA)
• LCD drive control circuit
  • Bias: 1/2, 1/3
  • Duty: 2, 3, 4
  • Common output: 4
  • Segment output: 24
• Main clock generating circuit: 1 (connect to external ceramic resonator or on-chip oscillator)
• Sub-clock generating circuit: 1 (connect to external quartz-crystal oscillator)
• Power source voltage (QzROM version)
  • [In frequency/2 mode]
    • (f(XIN) < 12.5 MHz) : 4.5 to 5.5 V
    • (f(XIN) < 8 MHz) : 4.0 to 5.5 V
    • (f(XIN) < 4 MHz) : 2.0 to 5.5 V
    • (f(XIN) < 2 MHz) : 1.8 to 5.5 V
  • [In frequency/4 mode]
    • (f(XIN) < 16 MHz) : 4.5 to 5.5 V
    • (f(XIN) < 8 MHz) : 2.0 to 5.5 V
    • (f(XIN) < 4 MHz) : 1.8 to 5.5 V
  • [In frequency/8 mode]
    • (f(XIN) < 16 MHz) : 4.5 to 5.5 V
    • (f(XIN) < 8 MHz) : 2.0 to 5.5 V
    • (f(XIN) < 4 MHz) : 1.8 to 5.5 V
  • [In low-speed mode]: 1.8 to 5.5 V
  Note: 12.5 MHz < f(XIN) < 16 MHz is not available in the frequency/2 mode.
• Power source voltage (Flash memory version)
  • [In frequency/2 mode]
    • (f(XIN) < 12.5 MHz) : 4.5 to 5.5 V
    • (f(XIN) < 8 MHz) : 4.0 to 5.5 V
    • (f(XIN) < 4 MHz) : 2.7 to 5.5 V
  • [In frequency/4 mode]
    • (f(XIN) < 16 MHz) : 4.5 to 5.5 V
    • (f(XIN) < 8 MHz) : 2.7 to 5.5 V
  • [In frequency/8 mode]
    • (f(XIN) < 16 MHz) : 4.5 to 5.5 V
    • (f(XIN) < 8 MHz) : 2.7 to 5.5 V
  • [In low-speed mode]: 2.7 to 5.5 V
  Note: 12.5 MHz < f(XIN) < 16 MHz is not available in the frequency/2 mode.
• Power dissipation (QzROM version)
  • In frequency/2 mode: Typ. 32 mW (VCC = 5 V, f(XIN) = 12.5 MHz, Ta = 25 degrees C)
  • In low-speed mode: Typ. 18 μW (VCC = 2.5 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25 degrees C)
• Power dissipation (Flash memory version)
  • In frequency/2 mode: Typ. 20 mW (VCC = 5 V, f(XIN) = 12.5 MHz, Ta = 25 degrees C)
  • In low-speed mode: Typ. 1.1 mW (VCC = 2.7 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25 degrees C)
• Operating temperature range: -20 to 85 degrees C

Flash Memory Mode

• Program/Erace voltage: VCC = 2.7 to 5.5 V
• Program method: Programming in unit of byte
• Erace method: Block erasing
• Program/Erase control by software command