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Product Overview:

LCD driver MCU with built-in A/D converter, serial interface, sub-clock, etc. Maximum oscillation frequency is 12.5MHz. Comes in a 64-pin package. QzROM version and Flash memory version are pin-compatible with 38C2A Group. Enhanced with ROM correction function and on-chip oscillator.

38000Series QzROM

The following difference documents can be downloaded from an "Application Notes" button
in the left navigation on this page.

  • Difference Between 38C1 Group and 38D2 Group (Document No.REJ05B1056)
  • Difference between 38C2A Group and 38D2 Group (Document No.REJ05B0833)
  • Difference Between 38D5 Group and 38D2 Group (Document No.REJ05B1055)

 

Key Features:

  • Basic machine-language instructions: 71
  • The minimum instruction execution time: 0.32 μs(at 12.5 MHz oscillation frequency)
  • Memory size (QzROM version)
    • ROM: 16 K to 60 K bytes
    • RAM: 640 to 2048 bytes
  • Memory size (Flash memory version)
    • ROM: 60 K bytes
    • RAM: 2048 bytes
  • Programmable input/output ports: 51 (common to SEG: 24)
  • Interrupts: 18 sources, 16 vectors
  • Timers: 8-bit × 4, 16-bit × 2
  • Serial Interface : 8-bit × 2 (UART or Clock-synchronized)
  • PWM: 10-bit × 2, 16-bit × 1 (common to IGBT output)
  • A/D converter: 10-bit × 8 channels (A/D converter can be operated in low-speed mode.)
  • Watchdog timer: 8-bit × 1
  • ROM correction function : 32 bytes × 2 vectors
  • LED direct drive port: 8 (average current: 15 mA, peak current: 30 mA, total current: 90 mA)
  • LCD drive control circuit
    • Bias: 1/2, 1/3
    • Duty: 2, 3, 4
    • Common output: 4
    • Segment output: 24
  • Main clock generating circuit: 1 (connect to external ceramic resonator or on-chip oscillator)
  • Sub-clock generating circuit: 1 (connect to external quartz-crystal oscillator)
  • Power source voltage (QzROM version)
    • [In frequency/2 mode]
      • (f(XIN) < 12.5 MHz) : 4.5 to 5.5 V
      • (f(XIN) < 8 MHz) : 4.0 to 5.5 V
      • (f(XIN) < 4 MHz) : 2.0 to 5.5 V
      • (f(XIN) < 2 MHz) : 1.8 to 5.5 V
    • [In frequency/4 mode]
      • (f(XIN) < 16 MHz) : 4.5 to 5.5 V
      • (f(XIN) < 8 MHz) : 2.0 to 5.5 V
      • (f(XIN) < 4 MHz) : 1.8 to 5.5 V
    • [In frequency/8 mode]
      • (f(XIN) < 16 MHz) : 4.5 to 5.5 V
      • (f(XIN) < 8 MHz) : 2.0 to 5.5 V
      • (f(XIN) < 4 MHz) : 1.8 to 5.5 V
    • [In low-speed mode]: 1.8 to 5.5 V
    Note: 12.5 MHz < f(XIN) < 16 MHz is not available in the frequency/2 mode.
  • Power source voltage (Flash memory version)
    • [In frequency/2 mode]
      • (f(XIN) < 12.5 MHz) : 4.5 to 5.5 V
      • (f(XIN) < 8 MHz) : 4.0 to 5.5 V
      • (f(XIN) < 4 MHz) : 2.7 to 5.5 V
    • [In frequency/4 mode]
      • (f(XIN) < 16 MHz) : 4.5 to 5.5 V
      • (f(XIN) < 8 MHz) : 2.7 to 5.5 V
    • [In frequency/8 mode]
      • (f(XIN) < 16 MHz) : 4.5 to 5.5 V
      • (f(XIN) < 8 MHz) : 2.7 to 5.5 V
    • [In low-speed mode]: 2.7 to 5.5 V
    Note: 12.5 MHz < f(XIN) < 16 MHz is not available in the frequency/2 mode.
  • Power dissipation (QzROM version)
    • In frequency/2 mode: Typ. 32 mW (VCC = 5 V, f(XIN) = 12.5 MHz, Ta = 25 degrees C)
    • In low-speed mode: Typ. 18 μW (VCC = 2.5 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25 degrees C)
  • Power dissipation (Flash memory version)
    • In frequency/2 mode: Typ. 20 mW (VCC = 5 V, f(XIN) = 12.5 MHz, Ta = 25 degrees C)
    • In low-speed mode: Typ. 1.1 mW (VCC = 2.7 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25 degrees C)
  • Operating temperature range: -20 to 85 degrees C

Flash Memory Mode

  • Program/Erace voltage: VCC = 2.7 to 5.5 V
  • Program method: Programming in unit of byte
  • Erace method: Block erasing
  • Program/Erase control by software command

Key Applications:

Home appliances, consumer electronics

Product Lineup:


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